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CMPA0060002F
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared
to Si and GaAs transistors. This MMIC employs a distributed
(traveling-wave) amplifier design approach, enabling extremely
PN: CMPA00
Pa e Type
ck :
ag 78
wide bandwidths to be achieved in a small footprint screw-down
package featuring a copper-tungsten heat sink.
60002F
0019
Typical Performance Over 20 MHz - 6.0 GHz
(T C = 25?C)
Parameter
Gain
Saturated Output Power, P SAT1
Power Gain @ P SAT1
PAE @ P SAT1
20 MHz
19.9
4.3
14.7
34
0.5 GHz
18.8
4.1
13.1
28
1.0 GHz
17.8
4.5
12.6
29
2.0 GHz
16.8
4.2
12.2
28
3.0 GHz
16.8
3.7
12.6
24
4.0 GHz
17.5
3.9
10.9
26
5.0 GHz
18.5
4.8
12.2
33
6.0 GHz
16.5
3.7
9.5
20
Units
dB
W
dB
%
Note 1 : P SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
Note 2 : V DD = 28 V, I DQ = 100 mA
Features
? 17 dB Small Signal Gain
? 3 W Typical P SAT
? Operation up to 28 V
? High Breakdown Voltage
? High Temperature Operation
Applications
? Ultra Broadband Amplifiers
? Fiber Drivers
? Test Instrumentation
? EMC Amplifier
Drivers
? 0.5” x 0.5” total product size
Fi gure 1.
Subject to change without notice.
www.cree.com/rf
1
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